http://10.10.120.238:8080/xmlui/handle/123456789/101| Title: | Engineering the Active Region to Enhance the IQE by ~8% in AlGaN/GaN based UV-C LED |
| Authors: | Acharya J. Venkateshh S. Ghosh K. |
| Issue Date: | 2021 |
| Publisher: | IEEE Computer Society |
| Abstract: | To increase the internal quantum efficiency (IQE) of AlGaN/GaN based multi quantum-well (MQW) UV-C LED, the aluminium composition of barriers and wells in the active region has been engineered. Increase in electron-hole overlap and hence the radiative recombination rate in the final engineered structure has enabled to enhance the IQE by 8%. © 2021 IEEE. |
| URI: | https://dx.doi.org/10.1109/NUSOD52207.2021.9541462 http://localhost:8080/xmlui/handle/123456789/101 |
| ISBN: | 978-1665412766 |
| ISSN: | 2158-3234 |
| Appears in Collections: | Conference Paper |
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