Engineering the Active Region to Enhance the IQE by ~8% in AlGaN/GaN based UV-C LED

Full metadata record

DC Field	Value	Language
dc.contributor.author	Acharya J.	en_US
dc.contributor.author	Venkateshh S.	en_US
dc.contributor.author	Ghosh K.	en_US
dc.date.accessioned	2023-11-30T07:31:15Z	-
dc.date.available	2023-11-30T07:31:15Z	-
dc.date.issued	2021	-
dc.identifier.isbn	978-1665412766	-
dc.identifier.issn	2158-3234	-
dc.identifier.other	EID(2-s2.0-85116352487)	-
dc.identifier.uri	https://dx.doi.org/10.1109/NUSOD52207.2021.9541462	-
dc.identifier.uri	http://localhost:8080/xmlui/handle/123456789/101	-
dc.description.abstract	To increase the internal quantum efficiency (IQE) of AlGaN/GaN based multi quantum-well (MQW) UV-C LED, the aluminium composition of barriers and wells in the active region has been engineered. Increase in electron-hole overlap and hence the radiative recombination rate in the final engineered structure has enabled to enhance the IQE by 8%. © 2021 IEEE.	en_US
dc.language.iso	en	en_US
dc.publisher	IEEE Computer Society	en_US
dc.source	Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD	en_US
dc.title	Engineering the Active Region to Enhance the IQE by ~8% in AlGaN/GaN based UV-C LED	en_US
dc.type	Conference Paper	en_US
Appears in Collections:	Conference Paper