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Please use this identifier to cite or link to this item: http://10.10.120.238:8080/xmlui/handle/123456789/492
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dc.contributor.authorGarg P.en_US
dc.contributor.authorBera A.en_US
dc.date.accessioned2023-11-30T08:35:35Z-
dc.date.available2023-11-30T08:35:35Z-
dc.date.issued2023-
dc.identifier.issn0003-6951-
dc.identifier.otherEID(2-s2.0-85165226356)-
dc.identifier.urihttps://dx.doi.org/10.1063/5.0159085-
dc.identifier.urihttp://localhost:8080/xmlui/handle/123456789/492-
dc.description.abstractDesigning an optoelectronic device requires adequate information about the photo-response of the active material. Here, we have studied the optical and optoelectrical properties of the solution-processed inverse spinel structured CoFe2O4 (CFO) thin film and correlated it with the photovoltaic performance of CFO active material-based all-oxide solar cell. The optical absorption spectra of spin-coated CFO films show the existence of a direct bandgap of 2.64 eV with a maximum absorption coefficient &gten_US
dc.description.abstract105/cm. A simple spin-coated CFO/TiO2 p-n heterojunction shows an open circuit voltage of over 0.95 V under 1 sun illumination. However, photo-induced oxygen vacancy formation and the desorption of surface oxygen lead to additional electron generation and hole capture, respectively, in the p-type CFO, resulting in an anomalous photocurrent decay under white light illumination, resulting in a low short-circuit current density. This study provides a fundamental understanding of photo-carrier dynamics in solution-processed CFO thin films and apprehends the photophysics of designing spinel-ferrite-based optoelectronic devices. © 2023 Author(s).en_US
dc.language.isoenen_US
dc.publisherAmerican Institute of Physics Inc.en_US
dc.sourceApplied Physics Lettersen_US
dc.titlePhoto-induced oxygen vacancy formation and anomalous photoconductivity in solution-processed CoFe2O4 thin filmsen_US
dc.typeJournal Articleen_US
Appears in Collections:Journal Article

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