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Please use this identifier to cite or link to this item: http://10.10.120.238:8080/xmlui/handle/123456789/170
Title: Effect of Parabolic Quantum Well on Internal Quantum Efficiency of InGaN/GaN based Micro-LED at low current density
Authors: Gurjar R.
Singh C.P.
Meena A.S.
Ghosh K.
Keywords: InGaN
Internal quantum efficiency
Parabolic quantum well
Radiative recombination
μ-LED
Issue Date: 2022
Publisher: IEEE Computer Society
Abstract: The quantum cascade stark effect (QCSE) in rectangular shaped quantum well (QW) poses a hindrance to increase the internal quantum efficiency (IQE) of nitride based LEDs. To circumvent the said problem for micro-LEDs operating at low current density, a parabolic QW structure has been proposed which is found to be useful to alleviate the QCSE and to increase the IQE. To emit around 500 nm, it has been observed that use of parabolic QW(instead of rectangular QWs) in the active region of micro-LED results in 10% less applied voltage to reach 0.1 A/cm2 current at which 50% more IQE is obtained. Further a variation in the number of parabolic QWs indicates that a two quantum well structure in the active region of the designed micro-LED will result in maximum IQE at a low current density of 0.1 A/cm2. However, the performance of the parabolic QWs are inferior to the rectangular QWs at high current densities where the conventional LED works. © 2022 IEEE.
URI: https://dx.doi.org/10.1109/NUSOD54938.2022.9894798
http://localhost:8080/xmlui/handle/123456789/170
ISBN: 978-1665478991
ISSN: 2158-3234
Appears in Collections:Conference Paper

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